TELECOMMUNICATIONS AND RADIO ENGINEERING - 2012 Vol. 71,
No 10 		 

 

 

 

ELECTRON-WAVE INTERACTION IN A SEMICONDUCTOR DIFFRACTION-GRATING STRUCTURE.
PART 2. ACTIVE INTERACTIONS IN A SEMICONDUCTOR MICROSTRUCTURE


V.A. Abdulkadyrov
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv, 61085, Ukraine
E-mail: abdulcad@ire.kharkov.ua

Abstract
We have examined the active wave interactions in a semiconductor microstructure in terms of the self-consistent statement of the relevant problem. A wave increment in the structure with reflecting shields that possess s finite conductivity has been found. We have locked into the conditions enabling one to amplify e.m. waves in a distributed semiconductor microstructure on the basis of the Smith-Purcell effect. We have also studied the peculiar aspects of exciting an open resonator through the semiconductor microstructure in the uniform and Gaussian field distribution. An expression for the starting current has been specified.
KEY WORDS: semiconductors, diffraction grating, mm- and submm-waves

References

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pages 905-922

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