TELECOMMUNICATIONS AND RADIO ENGINEERING - 2012 Vol. 71,
No 9 		 

 

 

 

HIGH-FREQUENCY ELECTRON CURRENT THROUGH A NON-STATIONARY TUNNEL JUNCTION


D.V. Abdulkadyrov, N.N. Beletskii, & S.A. Borysenko
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv, 61085, Ukraine
Address all correspondence to N.N. Beletskii E-mail: beletski@ire.kharkov.ua

Abstract
Tunneling electrons through a non-stationary tunnel junction are investigated within the framework of the approximation of one-quantum electron tunnel junctions. The effect of the thermal energy distribution of electrons in the emitter and collector of the tunnel junction is taken into account. The dependence of the high-frequency electron current on the frequency and the applied dc bias voltage is found. The influence of the barrier asymmetry on the active and reactive parts of the high-frequency electron current is studied.
KEY WORDS: tunneling electrons, non-stationary tunnel junction, high-frequency current

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pages 847-859

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