TELECOMMUNICATIONS AND RADIO ENGINEERING - 2012 Vol. 71,
No 8 		 

 

 

 

PROSPECTS FOR USING GUNN DIODES BASED ON GaN, AlN AND InN


I.P. Storozhenko & Yu.V. Arkusha
V. Karazin National University of Kharkiv,
4, Svoboda Sq., Kharkiv, 61077, Ukraine
Address all correspondence to I.P. Storozhenko E-mail: storozhenko_igor@mail.ru

Abstract
The transport properties of the idealized mode of limited space-charge accumulation and the resonance transit-time mode in n+–n–n+ and n+–n-–n–n+ GaN-, AlN-, InN-Gunn diodes have been studied. Promising, peculiarities and troubles in using nitride semiconductors in Gunn diodes are represented.
KEY WORDS: nitride semiconductor, Gunn diode, transport properties, frequency limit

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