TELECOMMUNICATIONS AND RADIO ENGINEERING - 2011 Vol. 70,
No 15 		 

 

 

 

A LOW VOLTAGE-TYPE SENSE AMPLIFIER DESIGN FOR EEPROM MEMORY



L.F. Rahman, M.B.I. Reaz, & M.A.M. Ali
Department of Electrical, Electronic and Systems Engineering
University Kebangsaan Malaysia
43600 UKM, Bangi, Selangor, Malaysia
Address all correspondence to M. B. I. Reaz E-mail: mamun.reaz@gmail.com

Abstract
To ensure both the reduced reading power and the enhanced reliability of the nonvolatile memories like EEPROM embedded in RFID transponders, a new low voltage-type sense amplifier (SA) is designed. The topology of the designed sense amplifier uses a voltage sensing method, with low cost, low power consumption as well as high reliability. The sense amplifier was designed in CEDEC 0.18-?m CMOS embedded EEPROM process with the 3.7 V power supply. Simulation results showed that the circuit is able to operate between 1 V to 3.7 V within the temperature range from -250 C to 1250 C. The novel topology allows the circuit to function with power supplies as low as 1 V. The simulations show that the new voltage-type sense amplifier required lower voltage than the previously reported voltage-type sense amplifier by Liu et al. Additionally the MOS size used for this circuit is 0.18-?m, which reduced the size of the circuit.
KEY WORDS:images recognition and classification, structural-hierarchical methods, structural description, principle of voting, compression of description, calculation expenses, probability of correct classification

References

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pages 1379-1385

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