TELECOMMUNICATIONS AND RADIO ENGINEERING - 2011 Vol. 70,
No 14 		 

 

 

 

RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS



I.P. Storozhenko & E.N. Zhivotova
National University of Pharmacy
53, Pushkinskaya Str. Kharkiv, 61002, Ukraine
Address all correspondence to I.P. Storozhenko E-mail: storozhenko_igor@mail.ru

Abstract
Disappearance of a drifting domain in devices on the basis of graded gap semiconductors has been studied. It has been shown that the length of drift region of the domain and the frequency of the generated current oscillations in the n+-n-n+ -devices on the basis of graded gap semiconductors depends on the voltage applied to the device. The conditions of existence of this effect have been found. It has been shown that usage of graded gap semiconductors allows increasing width of the working range of frequencies of Gunn diodes. The review of A3B5 graded gap semiconductors having the similar effect has been performed.

KEY WORDS:Gunn diode, graded gap semiconductor, intervalley transfer, resonance frequency

References

  1. Kasatkin, L.V., Chajka, V.E., and Swachka, A.V., (1989), Haracteristics of cased Gunn diodes in microwave oscillators, Electronic engineering. Ser. 1. Microwave electronics. 2:6-11 (in Russian).
  2. Kasatkin, L.V. and Chajka, V.E., (2006), Millimeter wave semiconductor devices, CryMiCo-06 Sevastopol, p. 319 (in Russian).
  3. Marshak, A.H. and Van-Vliet, K.M., (1978), Electrical current in solids with position-dependent band structure, Solid state electronics. 21(2):417-422.
  4. Akimov, A.K., Zajtsev, A.M., Moroz, E.P., and Chelnokov, V.E., (1981), Electronically frequency-tuned graded gap Gunn oscillator on the basis of AlxGa1-xAs, Electronic engineering. Ser. 1. Microwave electronics. 7:20–22 (in Russian).
  5. Storozhenko, I.P., (2003), Modeling the Gunn diodes based on variband semiconductors, Telecommunications and Radio Engineering. 58(1-2):100-110.
  6. Storozhenko, I.P., (2008), Initiation and drift of the space-charge waves in devices based on variband GaPx(z)As1-x(z) with the intervalley electron transport, Telecommunication and Radio Engineering. 67(10):881-894.
  7. Couch, N.R., Sponer, H., and Beton, P.H., (1989), High-performance graded AlGaAs injector GaAs Gunn diodes at 94GHz, IEEE Electron Device Lett. 10(7):288-290.
  8. Montanari, S., Forster, A., Lepsa, M.I., and Luth, H., (2005), High frequency investigation of graded gap injectors for GaAs Gunn diodes, Solid-State Electronics. 49(2):245-250.
  9. Ivanov, V.N., Kovtonyuk, V.M., and Nikolaenko, Yu.E., (2007), Gunn diodes made of GaAs with a cathode contact injecting hot electrons, Technology and design of electronic equipment. 2:29-30 (in Russian).
  10. Storozhenko, I.P., Prokhorov, E.D., Botsula, O.V., Arkusha, Yu.V., (2008), Graded band gap diodes with static domain, 18th International Crimean Conference “Microwave and Telecommunication Technology” (CriMiCo 2008), Sevastopol, 1:141–142 (in Russian).


pages 1295-1304

Back