Multifrequency Self-Oscillations in Semiconductor Structures
with Two Coupled Avalanche
p-n Junctions

Abstract
Results of numerical solution to the equations of drift-diffusion model (DDT) of semiconductor structures with abrupt avalanche junctions are presented. The multifrequency self-oscillation mode in Ge-, Si- and GaAs-based structures with a dc reverse bias has been found can operate. The excitation mechanism of self-oscillations has been investigated and the generated spectrum has been analyzed. It is shown that semiconductor structures with abrupt junctions represent a kind of the sustained-excited oscillation system. They can be used for designing multifrequency generators of the microwave frequency range.

KEY WORDS:semiconductor, pn–i–pn-structure, avalanche-cascade amplification, impact ionization, difference method, multifrequency self-oscillations

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pages 925-937

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