TELECOMMUNICATIONS AND RADIO ENGINEERING - 2010 Vol. 69,
No 5 		 

 

 

 

Model Microwave Mixers Based on Abrupt p-n-Junctions


P.P. Maksymov
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv 61085, Ukraine
Address all correspondence to P.P. Maksymov E-mail: maximov@ire.kharkov.ua

Abstract
Computer-assisted simulations are described of microwave mixers implemented on the basis of Ge-, Si- and GaAs p-n-junctions. The mathematical model involves equations of the drift-diffusion model of semiconductor devices. The drift-diffusion model equations are solved using the modified counter-sweep method. The operation principle of the mixer is analyzed. The physical nature of signal distortions has been identified. The amplification factor, as well as the gain characteristic and frequency response have been calculated. Frequency spectra and phases of the output signals of the Ge-, Si- and GaAs-based p-n-junctions are presented.

KEY WORDS: semiconductor, abrupt avalanche p-n transition, impact ionization, mixer of SHF signals, phases distortions



References
  1. Shitov, S.V., Markov, A.V., and Jecson, B.D., (2002), A low-noise SIC mixer for 1 GHz, using a double-dipole antenna, ZhTF, 72(9):87-92 (in Russian).
  2. Tager, A.S. and Vald-Perlov, V.M., (1968), IMPATT diodes and their application in the microwave technology, Sov. Radio, Moscow: 480 p. (in Russian).
  3. Sze, S.M., (1969), Physics of semiconductor devices, Wiley’s, New York, - 456 p.
  4. Carroll, J.E., (1970), Hot electron microwave generators, Edward Arnold (Publishers) LTD, London, -384 p.
  5. Gurtov, V.A., (2004), Solid-state electronics, Izd-vo PetrGU, Petrozavodsk: 432 p. (in Russian).
  6. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2003), Self-oscillations in reverse biasedp-n-junction with current injection, Appl. Phys. (Lett.), 83(20):4643-4645.
  7. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2007), Terahertz self-oscillations in reverse-biased p-n-junction, MSMW’07 Symposium Proceeding, Kharkov, Ukraine, pp.201-203.
  8. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2007), Terahertz self-oscillations in avalanche p-n-junction with DC current injection, MSMW’07 Symposium Proceeding, Kharkov, Ukraine, pp.204-206.
  9. Lukin, K.A. and Maksymov, P.P., (2008), Cascaded avalanche amplification of pulses in a pn-i-pn semiconducting structures with reverse-biased p-n-junctions, Radiofizika and Elektronika. 13(1):118-124 (in Russian).
  10. Lukin, K.A. and Maksymov, P.P., (2008), Self-oscillation regime of abrupt p-n-junctions with a dc reverse bias, Radiofizika and Elektronika. 13(2):232-238 (in Russian).
  11. Lukin, K.A. and Maksymov, P.P., (1999), A modified counter-sweep method, Radiofizika and Elektronika. 4(1):83-86 (in Russian).
  12. Lukin, K.A. and Maksymov, P.P., (1999), A technique for calculating semiconducting structures with abrupt p-n-junctions, Radiofizika and Elektronika. 4(1):87-92 (in Russian).
  13. Lukin, K.A. and Maksymov, P.P., (2005), A technique for calculating avalanche p-n-junctions operating in the self-oscillation mode, Radiofizika and Elektronika. 10(1):109-115 (in Russian).
  14. Lukin, K.A. and Maksymov, P.P., (2002), Electrostatic fields in reverse-biased pn-i-pn-structures, Radiofizika and Elektronika. 7(2):317-322 (in Russian).
  15. Maksymov, P.P., (2008), An algorithm for solving equations of the drift-diffusion model of semiconducting structures with avalanche p-n-junctions, Radiofizika and Elektronika. 13(3):523-528 (in Russian).
  16. Samarsky, A.A. and Popov, Yu.P., (1980), Finite-difference methods in the problems of gas dynamics, Nauka, Moscow: 352 p. (in Russian).


pages 429-440

Back