MAGNETORESISTANCE OF A NONSTATIONARY MAGNETIC TUNNEL JUNCTION
D.V. Abdulkadyrov & N.N. Beletskii
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv 61085, Ukraine
Address all correspondence to N.N. Beletskii E-mail: beletski@ire.kharkov.ua
Abstract
Electron tunneling through a non-stationary magnetic tunnel junction as an approximation of a low-amplitude alternating electric field has been investigated. Dependences of active and passive components of a high-frequency tunneling magnetoresistance through a magnetic junction on the frequency and the applied constant bias voltage have been studied.
KEY WORDS:tunneling electrons, non-stationary magneto junction, high-frequency current
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