TELECOMMUNICATIONS AND RADIO ENGINEERING - 2010 Vol. 69,
No 15 		 

 

 

 

OPTICAL PROPERTIES
OF ZnSe:V CRYSTALS

V.P. Makhniy, O.V. Kinzerskaya
Chernivtsi National University, 2 Kotsyubynsky str.,
58012 Chernivtsi, Ukraine
P.P. Horley
2Centro de Investigacion en Materiales Avanzados (CIMAV) Chihuahua-Monterrey, Avenida Miguel de Cervantes 120, 31109 Chihuahua, Mexico
Address all correspondence to O.V. Kinzerskaya E-mail: OksanaKinzersky@rambler.ru

Abstract
We analyzed spectra of transmission, reflection and photoluminescence for ZnSe crystals doped with vanadium from the vapor phase in the closed volume, showing that doping does not change band gap of the material but significantly decreases its transmission coefficient for the energies 0.2–2.7 eV and is also responsible for an absorption band at about 2.5 eV. The luminescence spectrum measured at room temperature contains only a blue band caused by interband transitions and recombination via shallow donor levels of selenium vacancies.
KEY WORDS: optoelectronic, semiconductor, impurity, transmission zinc selenide, diffusion, 3d-element, recombination

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pages 1401-1406

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