TELECOMMUNICATIONS AND RADIO ENGINEERING - 2010 Vol. 69,
No 15 		 

 

 

 

Harmonic Generation and Frequency Multiplication Caused by the Impact Ionization in GaN-Diodes


Î.V. Botsula, D.V. Pavlenko, & E.D. Prokhorov
V. Karazin National University of Kharkov,
4, Svoboda Sq., Kharkiv, 61077, Ukraine
«Address all correspondence to E.D. Prokhorov E-mail: Eduard.D.Prohkorov@univer.kharkov.ua

Abstract
The object of the consideration is the impact ionization in GaN diodes. The study revealed rich potentialities of the considered compounds, with the impact ionization in the diodes, for the application in centimeter and millimeter wave ranges, as they can provide up to five-fold over-threshold voltage and the efficiency ranging from 11 to 13%. The achievable harmonic generation efficiency of GaN diodes has been demonstrated. The frequency multiplication by the impact ionization in GaN diodes has been considered. The impact ionization in GaN diodes can substantially increase the frequency conversion coefficient, so that at the second harmonic is reaches 40%.
KEY WORDS:  nitrides, negative differential conductivity, impact ionization, harmonic generation

References

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  4. Pavlenko, D.V. and Prokhorov, E.D., (2007), Influence îf impact ionization on operation efficiency of InN, GaN, AlN LSA diodes, Vestn. KhNU. Radiofizika and Elektronika. 756:109-112 (in Russian).
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  7. Prokhorov, E.D. and Shalayev, V.A., (1972), Study on the regularities of the impact ionization in the semiconductor engineering and microelectronics of the Gunn diodes, Poluprovodn. Tekhnika and Mikroelektron. 9:3-8 (in Russian).


pages 1391-1400

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