TELECOMMUNICATIONS AND RADIO ENGINEERING - 2010 Vol. 69,
No 11 		 

 

 

 

Self-Excited Oscillations in Abrupt p-n Junctions with a Fixed Reverse Bias


K.A. Lukin & P.P. Maksymov
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine
12, Academician Proskura St., Kharkiv 61085, Ukraine
«Address all correspondence to K.A. Lukin E-mail: Lndes@kharkov.com

Abstract
Numerical methods are used to solve the drift-diffusion model equations for reverse-based p-n junctions. A regime of self-excited oscillations is analyzed for an abrupt p-n junction with a fixed reverse bias. As has been shown, the equations of the drift-diffusion model of the p-n junctions under analysis in fact make up a mathematical model of a self-oscillating system. The generation mechanism of self-excited excitations has been investigated. The factors influencing the oscillation frequency, amplitude and spectrum have been established and frequency ranges determined for reverse-biased p-n junctions made of various materials.

KEY WORDS:semiconductor, self-oscillation diffusive-drifting model, reverse-biased p-n junction, impact ionization

References

  1. Tager, A.S., (1966), Avalanche diodes and their application in microwave engineering, Uspekhi fiz. nauk. 90(4):631-666 (in Russian).
  2. Tager, A.S. and Vald-Perlov, V.M., (1968), IMPATT diodes and their application in the microwave technology, Sov. Radio, Moscow: 480 p. (in Russian).
  3. Sze, S.M., (1969), Physics of semiconductor devices, Wiley’s, New York.
  4. Avalanche diodes. http://radiotexnik.info/poly_sp_1.php; Diodes. http://dessp.petru.ru/htm/2005/belova/index.htm.
  5. Boltovez, N.S., Ivanov, V.N., and Belyaev, A.E., (2006), Contacts with diffusion barriers on the basis of implantation of TiN and Ti(Zr)Bx in microwave diodes of the 200 to 350 GHz frequency range, Fizika i Tekhnika Poluprovodnikov. 40(6):753-757 (in Russian).
  6. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2003), Self-oscillations in reverse biased p-n junction with current injection, Appl. Phys. Lett., 83(20):4643-4645.
  7. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2007), Terahertz self-oscillations in avalanche p-n junction with DC current injection, MSMW’07 Symposium Proceeding, Kharkiv, Ukraine, pp.204-206.
  8. Lukin, K.A., Cerdeira, H.A., and Maksymov, P.P., (2007), Terahertz self-oscillations in reverse-biased p-n junction, MSMW’07 Symposium Proceeding, Kharkiv, Ukraine, pp.201-203.
  9. Lukin, K.A. and Maksymov, P.P., (2002), Electrostatic fields in reverse-biased pn-i-pn structures, Radiofizika and Elektronika. 7(2):317-322 (in Russian).
  10. Gershanov, V.Yu. and Garmashov, S.I., (2000), Guide on methods and algorithms for structural-and-physical modeling of integrated circuit elements: The drift-diffusion approximation, UPL RGU, Postov-na-Donu: 18 p. (in Russian).
  11. Carroll, J.E., (1970), Hot electron microwave generators, Edward Arnold (Publishers) LTD, London, -384 p.
  12. Lukin, K.A. and Maksymov, P.P., (1999), A modified counter-sweep method, Radiofizika and Elektronika. 4(1):83-86 (in Russian).
  13. Samarsky, A.A. and Popov, Yu.P., (1980), Finite-difference methods in the problems of gas dynamics, Nauka, Moscow: 352 p. (in Russian).
  14. Lukin, K.A. and Maksymov, P.P., (1999), A modeling technique for semiconducting structures with abrupt p-n junctions, Radiofizika and Elektronika. 4(1):87-92 (in Russian).
  15. Lukin, K.A. and Maksymov, P.P., (2005), A method for modeling avalanche p-n junctions in the free-running mode, Radiofizika and Elektronika. 10(1):109-115 (in Russian).
  16. Semiconductor photoelectric transducers for ultraviolet spectral range http://www.rfbr.ru/pics/4890ref/file.pdf.
  17. Madelung, O., (1967), Physics of AIII-BV semiconductors, Mir, Moscow: 479 p. (in Russian).
  18. Physical encyclopedia, (1970), Moscow: 770 p. (in Russian).


pages 1005-1017

Back