TELECOMMUNICATIONS AND RADIO ENGINEERING - 2009 Vol. 68,
No 14
 

 

 

 

Avalanche-Cascade Amplification of Pulses in pn-i-pn Structures with Reverse-Biased p-n Junctions

K.A. Lukin and P.P. Maksymov
A. Usikov Institute of Radio Physics and Electronics,
National Academy of Sciences of Ukraine


Abstract
The process of avalanche-cascade amplification is modeled for reverse-biased pn-i-pn structures operating both in the linear and non-linear regime. The amplification factor is analyzed in dependence on the charge of mobile carriers, concentration of donor atoms, electric field strength and magnitude of the reverse bias. The resonance frequency has been estimated for GaAs-based pn-i-pn structures. The effect of the life-time of nonequilibrium current carriers on the threshold current magnitude for the GaAs-based pn-i-pn structures is analyzed.

References

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pages 1257-1270

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